Type | Supercond-ucting | Supercond-ucting | Supercond-ucting | Supercond-ucting | Trapped Ions | Trapped Ions | Trapped Ions | Trapped Ions | Silicon Spin | Silicon Spin | Silicon Spin | Silicon Spin | Photonics | Photonics | Photonics | NV Diamond | Neutral Atoms | Topological | |
Sub-type | Tunable | Fixed Freq. | Parametric | Flux | Hyperfine | Optical | NF Microwave | GF Microwave | Si Mos | Si SiGe | Imp. Donor P | STM Donor P | SOI | Si3N4 | Other | ||||
Lifetime (T2) | seconds | 1.5E-5 | 5.0E-5 | 2.0E-5 | 5.0E-8 | 50 | 0.2 | 50 | 1.6 | 3.3E-6 | 1.0E-6 | 0.55 | 0.00015 | 0.00015 | 10 | 0.32 | |||
Best 2Q gate | % | 0.997 | 0.991 | 0.992 | 0.9992 | 0.996 | 0.997 | 0.985 | 0.98 | 0.92 | 0.9 | 0.98 | 0.992 | 0.974 | |||||
2Q Gate speed | seconds | 1.2E-8 | 1.7E-7 | 1.76E-7 | 5.0E-5 | 1.6E-6 | 0.00325 | 0.0027 | 8.0E-8 | 1.0E-7 | 8.0E-10 | 1.0E-9 | 1.0E-9 | 0.0001 | 1.0E-6 | ||||
Lifetime/ | cycles | 1250 | 294 | 114 | 1000000 | 125000 | 15385 | 593 | 41 | 10 | 150000 | 150000 | 100000 | 320000 | |||||
Environment | 20mK | 20mK | 20mK | 20mK | Vacumn | Vacumn | Vacumn | Vacumn | 1K | 1K | 20mK | 20mK | 2K | 2K | 2K | Ambient | Vacumn | ||
Largest Device | 53Q | 27Q | 31Q | 2000Q | 11Q | 20Q | 2Q | 2Q | 2Q | 2Q | 2Q | 2Q | 12 mode | 100 mode | 10Q | 51Q | |||
Largest QV | 128 | 128 | |||||||||||||||||
USP | Flexible control & calibration | Streamlined control requirements | Hybrid tuanable/ fixed benefits | Quantum Annealing in NISQ era | High fidelity & connectivity | Easier optical integration | High fidelity potential without lasers | Very modular and scalable | CMOS compatibility | CMOS with lower disorder lattice | CMOS with improved lifetimes | Atomic level precision manufacture | Leverage silicon photonics to scale rapidly | Leverage qutuam squeezed light | Leverage standard components | Room temperature operation | Enhanced connectivity | Greatly reduced overheads | |
Key Challenge | Scaling-up control wiring | 2Q gate fidelities | 2Q gate fidelities | Demonstrating Quantum Advantage | Scaling-up laser control | Limited coherence lifetimes | Demonstrate multi-qubit device | 2Q gate fidelities | Demonstrate multi-qubit device | Demonstrate multi-qubit device | Demonstrate basic qubit operations | Demonstrate basic qubit operations | Photon loss | Photon counting detectors | Fibre wiring complexity | Poor NV-NV gate fidelity limits scaling | Scaling-up laser control | Create qubit | |
FTQC footprint | Building | Building | Building | Building | Building | Building | Building | Chip | Chip | Chip | Chip | Compact | Compact | Huge | Network | Building | |||
Notable Players | Google | IBM | Rigetti Bleximo | D-Wave Qilimanjaro | IonQ Honeywell | AQT | Oxford Ionics | Universal Quantum MicroQC NextGenQ | Intel/Qutech Origin Quantum Quantum Motion Hitachi | Intel/Qutech | Photonic Inc | SQC | PsiQ | Xanadu | UTSC (Jiuzhang) | Quantum Brilliance | ColdQuanta QuEra Pasqal Atom Computing | Microsoft |
For the references supporting this data please see the accompanying SWOT analysis documents.
Fact Based Insight gives precedence to: articles published in refereed journals, arXiv articles, conference presentations, personal correspondence.
Note: IonQ recently announced 32Q device with expected high QV not yet included as no performance results yet reported.
This data represents Fact Based Insights understanding of the data at the time of publication. We apologise for any misunderstandings or omissions. If you believe your data is not correctly represented here, or that there is other news we should hear about, please contact us.
Quick Navigation
Overview / Superconducting / Trapped Ions / Silicon Spin / Photonic / NV Diamonds / Neutral Atoms / Topological / Control / Dashboard
Pingback: Superconducting qubits – Fact Based Insight
Pingback: Trapped ions – Fact Based Insight
Pingback: Quantum hardware - into the quantum jungle – Fact Based Insight
Pingback: Silicon spin – Fact Based Insight